Maximum A Posteriori Estimation of Transient Enhanced Diffusion Energetics

( ) Transient enhanced diffusion TED of boron limits the formation of ultrashallow junctions needed in next-generation microelectronic de®ices. A comprehensi®e TED model needs many parameters go®erning the physical and chemical processes. Prior estimates of the most likely ®alues for the parameters as well as their accuracies are determined from maximum likelihood estimation applied to estimates from focused indi®idual experiments and density functional theory calculations. Here a systematic approach to model-parameter identification using maximum a posteriori estimation is employed combining the maximum likelihood parameter estimates and their uncertainties in conjunction with after-anneal boron SIMS profiles to obtain accurate TED energetics. Guidance on future experimental and ab initio efforts are gi®en based on the agree( ) ment and disagreement between the prior and posterior distributions.